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Ge Si薄膜的光学特性可以随内部组分的变化而变化 ,在光电子集成方面优于 Ga As、In P等传统的发光材料 ,已引起了人们的广泛关注。采用等离子体CVD法在玻璃衬底上沉积 Ge Si薄膜 ,研究了不同生长条件下的样品的光学特性 ,从样品的紫外 -可见光反射谱和透射谱计算出光学带隙 ,发现随着 Ge含量的增加 ,薄膜的光学带隙减小。并且研究了样品的光学带隙与温度的关系 ,当 Ge H4 流量为 4sccm时 ,薄膜的光学带隙随温度的升高有一个最小值 ,当 Ge H4 流量为 8sccm时 ,温度升高而薄膜的光学带隙基本不变。
The optical properties of Ge Si films can be changed with the changes of internal components. It has attracted much attention because of its superior optoelectronic integration over GaAs, InP and other traditional luminescent materials. GeSi films were deposited on glass substrates by plasma CVD. The optical properties of the samples were investigated under different growth conditions. The optical band gap was calculated from the UV-Vis spectra and transmission spectra of the samples. It was found that with the increase of Ge content Increase, the optical band gap of the film is reduced. The optical bandgap of the sample is also studied. The optical bandgap of the film has a minimum with the increase of temperature when the flow rate of Ge H4 is 4sccm. When the flow rate of Ge H4 is 8sccm, the temperature of the film increases Optical band gap basically unchanged.