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发展在绝缘衬底上得到电子学级硅薄膜的技术有很重要的技术意义。这种薄膜在介质隔离的集成电路、大面积平面显示电路和“高层”立体集成电路方面有着潜在的应用。到目前为止,已经可以利用使化学汽相淀积(CVD)硅熔化和再结晶获得具有最好的电学性能的薄膜。这种方法的主要效果是显著增大了淀积薄膜的平均晶粒尺寸。因为晶粒间界一般有害于薄膜的电输运性质,可以增加晶粒尺寸随之减少了晶粒间界的面积,结果改善了半导体薄膜。淀积薄膜的熔化可以利用各种能源,包括
The development of the technology for obtaining electron-grade silicon thin films on insulating substrates is of great technical significance. Such films have potential applications in dielectrically isolated integrated circuits, large area flat display circuits, and “high level” integrated circuits. So far, it has been possible to obtain thin films with the best electrical properties by melting and recrystallizing chemical vapor deposition (CVD) silicon. The main effect of this method is to significantly increase the average grain size of the deposited film. Since grain boundaries generally detriment the electrical transport properties of the film, increasing the grain size decreases the area of the grain boundaries, resulting in improved semiconductor thin films. The melting of deposited films can utilize a variety of energy sources, including