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Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy(PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy(PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE–TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn–Ga, L10-ordered(Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are presented. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered (Co, Fe) / Pt alloy, multilayer film [Co, Fe, CoFe / Pt, Pd, Ni, Au] N, The other part of the article focuses on the optimization and fabrication of CoFeB / MgO / CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.