利用射频磁控溅射技术在石英衬底上制备了MgZnO合金薄膜,并采用传统湿法刻蚀的方法在薄膜上制备了梳妆叉指Au电极,构成金属-半导体-金属(MSM)结构。在室温下,实现了太阳盲MgZnO光电探测器,器件的探测峰值位于225 nm,截止边为230 nm。 The MgZnO thin films were prepared on a quartz substrate by radio frequency magnetron sputtering and the Au electrode with a finger on the fingers was prepared by conventional wet etching method to form a metal - semiconductor - metal (MSM) structure. At room temperature, a solar-blind MgZnO photodetector was realized. The detector peak was at 225 nm and the cutoff edge was at 230 nm.