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由于超高频晶体管和二极管的发展以及薄膜技术的确立,目前正在大力研制使用薄膜工艺的放大器、混频器等微波集成电路。其中,微波放大器被用作毫米波、亚毫米波和卫星通信方式等中频放大器,在参考资料中已讨论了各种放大器。这些微波放大器大致可分为分布参数放大器和集总参数放大器两类。前者容易制作。由于匹配电路采用分布参数电路,所以,匹配电路的大小必然由使用频率来决定。放大器的小型和轻量方面尚存在着缺点。后者(集总参数放大器)匹配电路的大小与频率无直接关系,与先前的分布参数放大器相比,约为它的1/10以下。因此适于放大器的轻量和小型化。其缺点是要有很高的制作精度,然而这一点由于制作精度的提高和制作工序的建立,是能解决的问题。
Due to the development of ultra-high-frequency transistors and diodes and the establishment of thin-film technologies, microwave integrated circuits using thin-film processes, such as amplifiers and mixers, are currently under development. Among them, the microwave amplifier is used as an intermediate frequency amplifier such as a millimeter wave, a submillimeter wave and a satellite communication method, and various amplifiers have been discussed in the references. These microwave amplifiers can be roughly divided into distributed parameter amplifier and lumped parameter amplifier. The former is easy to make. Since the matching circuit uses distributed parameter circuits, the size of the matching circuit must be determined by the frequency of use. The small and lightweight aspects of the amplifier are still flawed. The latter (lumped parametric amplifier) matching circuit size and frequency is not directly related to the previous distributed parameter amplifier, it is about its 1/10 or less. So suitable for the light weight and miniaturization of the amplifier. The disadvantage is to have a high production accuracy, but this is due to the improvement of production accuracy and the establishment of the production process is a problem that can be solved.