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超晶格器件作为来来新型半导体器件,引起了人们的关注。所谓超晶格器件,就是使用高技术、人工控制达到原子级排列的器件。是不延用原来半导体技术的下一代器件。最近,这种超晶格器件由通产省从下一代到21世纪的超级计划推出。并命名为“RHET”(共振隧道效应强电子半导休管),其极精密的超高速、超多重处理技术,极大地促进了集成电路的进展。这项RHET的发明,是富士通研究所机能设计研究部部长横山直树。在此,对横山氏在RHET研
As a new type of semiconductor devices, superlattice devices have aroused people’s attention. The so-called superlattice devices, is the use of high-tech, artificially controlled atomically arranged devices. Is not to extend the use of the original semiconductor technology, the next generation of devices. Recently, this superlattice device was introduced by MITI from the next generation to the 21st century super plan. And named “RHET” (resonant tunneling effect of strong electronic semiconductor resting tube), its very sophisticated ultra-high-speed, multi-processing technology has greatly promoted the progress of integrated circuits. The RHET invention, Fujitsu Institute Functional Design Research Department Naoki Yokoyama. Here, Yokoyama research at RHET