本文报导了一种用电容放电代替常规热合金化实现 Al-Si 欧姆接触的简捷方法。该法能有效地抑制导致浅结器件失效的 Al-Si 互扩散现象,从而具有良好的结特性。 This paper reports a simple and efficient method to achieve ohmic contact of Al-Si by using capacitor discharge instead of conventional thermal alloying. The proposed method can effectively suppress the mutual diffusion of Al-Si, which leads to the failure of shallow junction devices, and thus has good junction characteristics.