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基于绝缘体上硅(SOI)的CMOS电路具有天然的抗单粒子优势,但绝缘埋层的存在使得其总剂量效应尤为突出和复杂。本文研究了利用离子注入改性SOI材料的总剂量辐射和退火效应、基于赝MOS技术的SOI材料辐射效应评估技术和离子注入改性提高SOI材料抗辐射性能的机理。实验结果表明,采用该技术制备的绝缘体上硅材料抗总剂量能力达到1Mrad(Si);离子注入改性SOI材料在经过室温和高温退火后,辐射导致的固定电荷和界面态可以完全恢复;离子注入和高温退火在二氧化硅薄膜中形成硅纳米团簇结构,从而引入深电子陷阱,补偿总剂量辐射引起的绝缘埋层中的空穴积累。
Silicon-on-insulator (SOI) -based CMOS circuits have natural anti-single-particle advantages, but the presence of buried insulating layers makes their total dose effect particularly prominent and complex. In this paper, the total dose radiation and annealing effect of SOI material modified by ion implantation are studied. The SOI material radiation effect evaluation technique based on the pseudo-MOS technology and the ion implantation modification are used to improve the radiation resistance of the SOI material. The experimental results show that the total dose resistance of the silicon-on-insulator material prepared by this technique reaches 1 Mrad (Si). After the ion-implantation modified SOI material anneals at room temperature and high temperature, the fixed charges and interface states caused by radiation can be completely recovered; The implantation and the high-temperature annealing form a silicon nanocluster structure in the silicon dioxide film, introducing a deep electron trap that compensates for the accumulation of holes in the buried insulating layer caused by the total dose of radiation.