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研究了强反馈条件下光栅调谐外腔半导体激光器 (ECLD)的双稳特性 .利用求得的载流子—频率 (N -ν)曲线上的双稳环跳变点处的载流子密度的解析表达式 ,分析了ECLD几个关键参量对载流子密度跳变幅度的影响 .
The bistable characteristics of grating-tuned external cavity semiconductor lasers (ECLDs) under strong feedback conditions are investigated. Using the calculated carrier density at the bistable ring trip point on the carrier-frequency (N -ν) curve The expression is analyzed, and the influence of several key parameters of ECLD on the carrier density jump is analyzed.