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采用反应蒸发的方法,在玻璃、Corning7059玻璃及石英玻璃衬底上制备了SnO2:(Cu,In)透明导电薄膜,对薄膜的各种元素的含量做了分析,给出了各种元素在膜中的分布情况;测量了薄膜的透过率,结果显示个别样品对紫外线有较高透过率,退火过程对透过率有影响.测量了电阻率与温度的关系,同时解释了样品的阻-温特性.对材料的光学带隙与吸收系数的关系做了讨论,给出了用透过率曲线确定光学带隙的简易方法.讨论了扩展态迁移率与迁移率边和费米能级之间的关系.结果显示,用铜、铟掺杂的氧化锡透明导电膜达到了降低成本的目的,个别样品有较宽的带隙.
SnO2: (Cu, In) transparent conductive films were prepared on glass, Corning7059 glass and quartz glass substrates by reactive evaporation. The contents of various elements in the films were analyzed. The transmittance of the film was measured and the result showed that the transmittance of ultraviolet light was higher in some samples and the influence of annealing process on the transmittance.The relationship between resistivity and temperature was measured and the resistance of sample - Temperature Properties The relationship between the optical bandgap and the absorption coefficient of the material is discussed, and a simple method to determine the optical bandgap with the transmittance curve is given. The relationship between extended state mobility and mobility edge and Fermi level The results show that with copper, indium doped tin oxide transparent conductive film to achieve the purpose of reducing costs, individual samples have a wider band gap.