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日立制作所采用新结构的 TFT,从而改善了大型 TGT-LCD 的批量生产技术。栅极绝缘膜采用 Al_2O_3/SiN 双层结构,降低了绝缘膜缺陷的发生率。另外,TFT 的栅极和栅极配线材料采用 Al 以取代过去的 Cr,使电阻率降低一个数量级,因而栅极配线可做到单层化,配线电阻从原来的7kΩ降至2kΩ,使 LCD 的性能大幅度改善。
Hitachi has adopted a new structure of the TFT, thereby improving the large-scale production of TGT-LCD technology. The gate insulating film adopts the Al 2 O 3 / SiN double-layer structure, which reduces the incidence of defects in the insulating film. In addition, the gate and gate wiring material of the TFT uses Al to replace the past Cr to reduce the resistivity by an order of magnitude, so the gate wiring can be made into a single layer, the wiring resistance is reduced from the original 7 kΩ to 2 kΩ, LCD performance greatly improved.