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砷化镓声电荷输运器件自从１９８２年问世以来得到了飞速的发展，它能够得到极高的运算速度和传输效率，正发展成为新一代的高速信号微处理器，它在通信、电子战、电子对抗等实时信号处理方面有着广泛的应用前景。本文给出了砷化镓中埋沟声电行输运过程的一维理论模型，并用该模型分析了Ｓｃｈｏｔｔｋｙ－Ｎ结构器件的电行输运特性与器件结构参数、工作状态的关系，如电荷包边界信息、电荷包内电有分布及电荷输运量。声电荷输运器件传送的电荷量与传统的埋沟电行耦合器件类似．
Since the advent of the gallium arsenide sound charge transport device in 1982 has been rapid development, it can be extremely high computing speed and transmission efficiency, is developing into a new generation of high-speed signal microprocessors, which in the communications, electronic warfare, Electronic countermeasures such as real-time signal processing has a wide range of applications. In this paper, a one-dimensional theoretical model of the transport process of gallium arsenide in buried gully sound is given and the relationship between the electrical characteristics of Schottky-N devices and the structure parameters and working conditions of the Schottky-N devices is analyzed. For example, Information on the pouch boundary, distribution of the electricity inside the pouch and the amount of charge transport. The amount of charge transferred by an acoustic charge transport device is similar to that of a conventional buried trench electrical coupling device.