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用掠入射X射线衍射及X射线反射对磁控溅射制取的等原子比Ni/Ti周期性多层膜晶化热处理后的TiNi形状记忆薄膜室温微结构进行了研究.TiNi形状记忆薄膜在深度方向的相分布和元素分布是不均匀的,都是一种多层结构.室温下其微结构特征为最外层是Ti氧化膜,再下层是Ti3Ni4,B19’马氏体相和少量的B2奥氏体相的三相混合物,靠近基体为主要相成分马氏体,最后是Ni和Si界面反应层.X射线反射率的拟和结果显示薄膜微结构的分析是合理的.薄膜中相深度分布的不均匀性主要是动力学因素决定的.
The TiNi shape memory films were characterized by grazing incidence X-ray diffraction and X-ray reflection at room temperature. The TiNi shape memory films were characterized by XRD, The phase distribution in the depth direction and the elemental distribution are inhomogeneous and all have a multi-layer structure. The microstructure at room temperature is characterized by the Ti oxide film as the outermost layer and the Ti3Ni4 and B19 ’martensitic phases as the lower layer B2 austenite phase near the matrix as the main phase component martensitic, and finally the reaction layer of Ni and Si interface.The X-ray reflectance of the fitting results show that the film microstructure analysis is reasonable. Inhomogeneity of depth distribution is mainly determined by kinetic factors.