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When single crystals of two different materials are in contact at a sharp interface and there is an epitaxial orientation relationship between them, the orientation relationship at the two sides across the interface is such that the degree of lattice continuity is maximized. In this study, a geometric method for predicting the orientation relationship between two crystals has been developed and applied to different homo-and heteroepitaxial systems. By means of this method, it is possible to determine the orientation relationship between any two crystals.
When single crystals of two different materials are in contact at a sharp interface and there is an epitaxial orientation relationship among them, the orientation relationship at the two sides across the interface is such that the degree of lattice continuity is maximized. geometric means for predicting the orientation relationship between two crystals has been developed and applied to different homo-and heteroepitaxial systems. By means of this method, it is possible to determine the orientation relationship between any two crystals.