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一种利用锗掺杂的新型PECVD自对准阻挡层,作为低成本的简单方法,可以提高铜互连对电迁移的抵抗能力。随着摩尔定律的推进,对铜互连抵抗电迁移(EM)的要求不断提高,而满足这种要求变得越来越困难。随着线条尺寸缩减,EM失效的临界孔洞尺寸也在缩小,从而导致平均失效时间(MTTF)急剧下。《国际半导体技术蓝图》(ITRS)指出,线条持续缩小要求工作电流密度增加。因此,随着等比例缩减的持续,必须大力提高对EM的抵抗力。
A new type of PECVD self-aligned barrier layer doped with germanium can improve the resistance of copper interconnects to electromigration as a simple, low-cost method. As Moore’s Law advances, the requirements for copper interconnect resistance electromigration (EM) continue to increase, and meeting these requirements becomes more and more difficult. As the line size shrinks, the critical hole size for EM failure is also shrinking, resulting in a drastic MTTF. The International Technology Roadmap for Semiconductors (ITRS) states that continued shrinking of lines requires increased operating current densities. Therefore, as the scaling down continues, the resistance to EM must be greatly enhanced.