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基于导带电子密度和材料的有效介电函数的表达式,推导了KTP晶体对532nm光波的吸收系数.对比研究了不同峰值功率密度和重复频率下KTP晶体的导带电子密度和532nm吸收系数的演化规律,以及倍频转换效率的演化规律.结果表明,随着导带电子密度的增加,KTP晶体532nm吸收系数随之增加,其倍频转换效率随之减小;当基频光入射功率密度一定时,不同重复频率脉冲作用引起的导带电子密度存在积累效应,导致KTP晶体532nm透过率及倍频转换效率均随着作用时间的增加呈指数形式变化,随着脉冲重复频率的增加其积累效果更加明显,但随着作用时间的增加,导带电子密度、吸收系数均趋于同一稳定值.
Based on the expressions of the conduction band electron density and the effective dielectric function of the material, the absorption coefficient of KTP crystal at 532nm was deduced.The conduction electron density of KTP crystal at different peak power density and repetition frequency and the absorption coefficient of 532nm Evolution law and frequency-doubling conversion efficiency.The results show that with the increase of electron density of conduction band, the absorption coefficient of KTP crystal increases with the increase of the 532nm absorption coefficient, When the impulse repetition frequency is increased, the conduction electron density caused by different repetition frequency impulse has a cumulative effect, resulting in the KTP crystal 532nm transmittance and frequency doubling conversion efficiency changes exponentially with the increase of the action time, as the pulse repetition frequency increases The accumulation effect is more obvious, but with the increase of the action time, the conduction band electron density and absorption coefficient all tend to the same stable value.