本文介绍用有机高分子膜(LB膜和聚酰亚胺)代替n型InP肖特基势垒二极管中的薄氧化层,所得到的肖特基势垒二极管的势垒高度大于0.7eV,反向漏电流小于2.3×10~(-5)A/cm~2,性能稳定.还叙述了有机高分子膜的制备方法,电学测量结果,并与金属/薄氧化膜/n-InP肖特基势垒进行了比较,同时讨论了该法的优缺点. This article describes the replacement of thin oxide layers in n-type InP Schottky barrier diodes with organic polymer films (LB films and polyimides) resulting in a Schottky barrier diode with a barrier height greater than 0.7 eV, The leakage current is less than 2.3 × 10 -5 A / cm 2, and the performance is stable. The preparation method of the organic polymer film and the electrical measurement result are also described, and are combined with the metal / thin oxide film / n-InP Schottky Barriers are compared, and discussed the advantages and disadvantages of the law.