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为对比不同类型起垄内嵌式基质栽培垄的温热性能,设置处理1为梯形土垄(T1),底宽40cm,高15cm;处理2为栽培槽(基质)宽度减小一半SSC垄(T2),底宽为35cm;处理3为槽体全嵌入(15cm)地平表面的SSC垄(T3),高度为0cm;处理4为半嵌入(5cm)地平表面的SSC垄(T4),高度为10cm;处理5为外侧无土包被的单一裸槽垄(T5),宽度为10cm;处理6为标准SSC垄(T6),规格与土垄一致。分别探究了宽度差异(T1、T2、T5和T6)和嵌入深度差异(T3、T4、T5和T6)栽培垄的根区温热变化特征及其甜椒苗生长情况。结果表明,宽度差异的栽培垄中,T6根区抵御环境低温的能力最强,最低温度分别比T1、T2和T5高0.55、1.27和1.33℃。T6的侧面和垂直方向上的热量传递较为缓慢和持久,能够蓄积更多的热量。嵌入深度和土壤包被差异的栽培垄中,T5抗低温能力最弱,T6抗低温能力最强,最低温度分别比T3、T4和T5高0.44、0.84和1.55℃。T3根区温度的稳定性较强。相对的,T3侧面和垂直方向上的根区热量传递缓慢,T5热量传导最为剧烈,T6在2个方向上的吸热时间较长。此外,宽度差异栽培垄中,T2、T5和T6甜椒幼苗生长优于T1,且T6最优;嵌入深度和土壤包被差异栽培垄中,T5甜椒幼苗的生长比其他处理差,T3和T6甜椒的各项指标差异不显著,但T6更有优势。总之,T6抗低温的能力比其他处理强,能够有效蓄积热量并且减缓热量散失,为冬季日光温室甜椒幼苗生长创造良好的根区温度条件,促进甜椒幼苗的生长。
In order to compare the thermal performance of different types of Ridge embedded substrate cultivation ridge Ridge set Ridge Ridge Ridge (T1), the bottom width 40cm, height 15cm; treatment 2 for the cultivation tank (substrate) width reduced by half SSC Ridge T2) with a bottom width of 35cm; Treatment 3 is the SSC ridge (T3) of the fully inlaid (15cm) horizontal surface of the tank with a height of 0cm; Treatment 4 is the SSC ridge (T4) of the semi-embedded (5cm) 10 cm; treatment 5 is a single bare ridge (T5) with a non-soil coating on the outside and a width of 10 cm; treatment 6 is a standard SSC ridge (T6) with the same specifications as the ridge. The warming characteristics of root zone of cultivated ridge with width difference (T1, T2, T5 and T6) and embedded depth difference (T3, T4, T5 and T6) and the growth of sweet pepper seedling were investigated respectively. The results showed that in the cultivated ridge with different widths, the T6 root zone had the strongest resistance to environmental low temperature, and the lowest temperature was 0.55, 1.27 and 1.33 ℃ higher than T1, T2 and T5, respectively. T6 heat transfer on the side and the vertical direction is slower and longer, to accumulate more heat. T5 had the weakest ability to resist low temperature and T6 had the highest ability to resist cold and the lowest temperature was 0.44, 0.84 and 1.55 ℃ higher than those of T3, T4 and T5, respectively. T3 root zone temperature stability. On the other hand, the heat transfer in the root zone of T3 and the vertical direction is slow, and the heat conduction in T5 is the most intense. T6 takes longer time to absorb heat in two directions. In addition, the growth of T2, T5 and T6 sweet pepper seedlings was better than T1 and T6 was the best among the cultivated ridge with different widths. The growth of T5 sweet pepper seedling was worse than that of other treatments, T6 bell pepper indicators of the difference was not significant, but T6 more advantages. In conclusion, the ability of T6 to resist low temperature is stronger than other treatments, which can effectively accumulate heat and slow the dissipation of heat, creating good root zone temperature conditions for the growth of sweet pepper seedlings in winter solar greenhouse and promoting the growth of sweet pepper seedlings.