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n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy (LPE) tech-nology. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) patterns showed the mirror smooth surface, flat interface, and good crystalline quality of the heterojunctions. Fourier transform infrared (FTIR) transmittance spectra exhibited that the cutoff wave-lengths of InAsSb epilayers reach 4.8 μm. The standard current-voltage (I-V) characteristics with a high differential-resistance-area-product at zero bias (R0A) of 1.02×10-1 Ωcm2 at room temperature indicate that the fine p-n junctions have been obtained.
n-InAs / p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy (LPE) tech-nology. Scanning electron microscopy (SEM) images and X-ray diffraction (FTIR) transmittance spectra demonstrated that the cutoff wave-lengths of InAsS epilayers reach 4.8 μm. The standard current-voltage (IV) characteristics with a high differential -resistance-area-product at zero bias (R0A) of 1.02 × 10-1 Ωcm2 at room temperature indicate that the fine pn junctions have been obtained.