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推导出了直接栅MOSFET静电场传感器的温度漂移系数,并研究了温度漂移的主要原因。此研究工作对消除直接栅MOSFET静电场传感器的温度漂移有一定的帮助。首先,建立了直接栅MOSFET静电场传感器沟道中电荷随温度变化的模型。其次,根据直接栅MOSFET沟道载流子浓度和载流子迁移率都为温度的函数,将直接栅MOSFET静电场传感器的温度漂移定义为由沟道载流子迁移率随温度变化引起的温度漂移系数αμ和由沟道载流子浓度随温度变化引起的温度漂移系数αQ,并对它们与温度的关系作了推导和研究。最后,对沟道载流子迁移率随温度变化引起的温度漂移系数αμ和由沟道载流子浓度随温度变化引起的温度漂移系数αQ进行了模拟和比较。模拟结果表明,温度漂移系数αμ远小于温度漂移系数αQ。因此沟道载流子浓度随温度变化是直接栅MOSFET静电场传感器的温度漂移的主要原因。
The temperature drift coefficient of direct gate MOSFET electrostatic field sensor is deduced and the main reason of temperature drift is studied. This research work to eliminate the direct gate MOSFET electrostatic field sensor temperature drift of some help. First of all, a model of the charge change with temperature in the channel of the direct gate MOSFET electrostatic field sensor is established. Secondly, the temperature drift of the direct gate MOSFET electrostatic field sensor is defined as the temperature caused by the change of the channel carrier mobility with the temperature, according to the direct gate MOSFET channel carrier concentration and carrier mobility as a function of temperature. The drift coefficient αμ and the temperature drift coefficient αQ caused by the variation of the channel carrier concentration with the temperature were deduced and their relations with temperature were deduced and studied. Finally, the temperature drift coefficient αμ and the temperature drift coefficient αQ caused by the change of channel carrier concentration with temperature are simulated and compared. Simulation results show that the temperature drift coefficient αμ is much smaller than the temperature drift coefficient αQ. Therefore, the channel carrier concentration with temperature changes is the main reason for the temperature drift of the direct gate MOSFET electrostatic field sensor.