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结合Marom模型与实验数据,给出了晶粒尺寸与金属薄膜厚度的关系式.基于已有的理论模型,针对厚度为10-50 nm Cu薄膜,考虑到表面散射与晶界散射以及电阻率晶粒尺寸效应,提出一种简化电阻率解析模型.结果表明,在10-20 nm薄膜厚度范围内,考虑晶粒尺寸效应后的简化模型与现有实验数据符合得更好.相对于Lim,Wang与Marom模型,所提模型的相对标准差分别降低74.24%,54.85%,78.29%.
The relationship between the grain size and the thickness of the metal thin film is given based on the Marom model and the experimental data.According to the existing theoretical models, for the 10-50 nm Cu thin film, considering the surface scattering and grain boundary scattering and the resistivity crystal Particle size effect, a simplified analytical model of resistivity is proposed.The results show that the simplified model considering the grain size effect is in good agreement with the existing experimental data in the film thickness range of 10-20 nm.Compared with Lim, Wang Compared with the Marom model, the relative standard deviation of the proposed model decreased by 74.24%, 54.85% and 78.29% respectively.