通过热场实验、拉晶参数实验与电阻率控制实验，研究了重掺砷＜１１１＞硅单晶的位制工艺，制备出无位错的Φ１００ｍｍ单晶，成品率达３３．８５％。还探讨了简便、高效的砷毒防护方法。 Through the experiments of thermal field, crystal pulling parameters and resistivity control experiments, the fabrication process of the arsenic <111> silicon single crystal with arsenic is studied, and the dislocation-free Φ100mm single crystal is prepared with the yield of 33.85%. Also discusses the simple, efficient arsenic poison protection methods.