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用电阻率测量、金相观察以及红外光谱等方法分别研究了氢区熔硅单晶在轻水反应堆和重水反应堆进行中子辐照后的退火特性。电阻率退火曲线表明，两种中子辐照样品都存在氢致施主。随着退火温度由低到高，轻水堆辐照样品存在一个导电类型由ｐ型到ｎ型的转型过程，而且在这种转型过程中，有一个明显的“周边滞后”现象。在重水堆辐照样品中，热处理缺陷表现为氢致Φ型缺陷（大麻坑），而在轻水堆辐照样品中，热处理缺陷表现为尺寸小得多的氢沉淀。红外光谱测量结果表明，重水堆中子辐照的样品经短时退火后观察不到氧沉淀，而在轻水堆辐照样品中存在吸收峰在１２３０ｃｍ－１附近的氧沉淀。
The annealing characteristics of the hydrogen-fused silicon single crystal after neutron irradiation in light and heavy water reactors were studied respectively by means of resistivity measurement, metallographic observation and infrared spectroscopy. The resistivity annealing curve shows that hydrogen-induced donor exists in both neutron irradiated samples. As the annealing temperature changes from low to high, there is a transition from p-type to n-type for irradiated samples in the light water reactor, and there is a clear “peripheral hysteresis” phenomenon during this transition. In the heavy water reactor irradiated samples, the heat treatment defects showed hydrogen induced Φ defects (cannabis), while in the irradiated samples of light water reactor, the heat treatment defects appeared as much smaller size hydrogen precipitation. Infrared spectroscopy measurements showed that no oxygen precipitation was observed after short-time annealing of samples irradiated by heavy water reactor neutrons, while oxygen precipitates with absorption peak near 1230cm-1 were present in irradiated samples of light water reactor.