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本文研究了在开管滑移系统中由富Te溶液生长较低x值(0.2—0.3)的碲镉汞(Hg_(1-x)C_(dx)Te)外延薄层问题。提出一种具有独到特色的半封闭滑移接触系统,使我们有可能在大气压下生长出低x值的材料。采用Cd_(1-y)Zn_yTe和Hg_(1-x)Cd_xTe衬底替代CdTe衬底,改善了薄膜的质量。讨论了衬底的影响和生长过程,同时给出位于较低温度处的固相线。原生外延层是p型的,77K时,空穴浓度约为1×10~(17)厘米~(-3),空穴迁移率为300厘米~2伏~(-1)秒~(-1),过剩少子寿命为3毫微秒。
In this paper, the problem of epitaxial thin film of Hg_ (1-x) C_ (dx) Te) grown from a Te-rich solution in an open-tube slip system at low x (0.2-0.3) A unique semi-closed sliding contact system was proposed that made it possible to grow low-x material at atmospheric pressure. The CdTe substrates were replaced by Cd_ (1-y) Zn_yTe and Hg_ (1-x) Cd_xTe substrates to improve the film quality. The effect of the substrate and the growth process are discussed, along with the solidus line at a lower temperature. The primary epitaxial layer is p-type. At 77K, the hole concentration is about 1 × 10-17 cm -3 and the hole mobility is about 300-2V -1 ), The excess few children have a life of 3 nanoseconds.