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基于HCl辅助热蒸发GaN粉末的方法制备了纯净的一维GaN纳米线垂直阵列,重点研究了不同生长时间对应不同形貌的GaN纳米结构的电子场发射性能,以及氨气氛围下热退火对GaN纳米线阵列场发射性能的影响,并分析了其影响机理。通过对生长时间分别为20 min,60 min(未退火处理)与60 min(退火处理)的三组样品进行对比,结果显示:生长时间为60 min(未退火处理)的样品,电流密度达到1μA/cm2时的开启电场的值为2.1 V/μm,且获得1 m A/cm2的阈值电流密度也只需要4.5 V/μm的电场。
Based on the HCl-assisted thermal evaporation of GaN powder, a pure one-dimensional GaN nanowire vertical array was prepared. The electron field emission properties of GaN nanostructures corresponding to different morphologies at different growth times were studied emphatically. Nanowire array field emission performance, and analysis of its impact mechanism. The comparison of the three samples with growth time of 20 min, 60 min (no annealing treatment) and 60 min (annealing treatment) showed that the current density reached 1 μA for 60 min (without annealing treatment) / cm2, the on-field value is 2.1 V / μm, and a threshold current density of 1 m A / cm2 also requires only an electric field of 4.5 V / μm.