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针对高精密氮化硅陶瓷器件的需求,采用金属蒸发真空电弧离子注入机进行金属Al+3注入Si3N4,并对其抗氧化性能进行了研究。注入能量为40keV,注入剂量分别为5×1016ion/cm2和2×1017ion/cm2。在1200℃,长达77h,对Si3N4的循环氧化行为进行了实验研究。用SEM,XRD和EDS等方法对样品进行了观察和分析。结果表明:Al+3注入提高了Si3N4样品的抗氧化性能,氧化质量变化符合抛物线规律。原始Si3N4样品的氧化层较厚,与基体有较明显的分层现象;注入铝的Si3N4试样氧化层较薄和致密,与基体没有明显的分层现象,电子价态分析表明:注入的金属铝形成的氧化铝是提高Si3N4抗氧化性能的主要原因。
In order to meet the demand of high-precision silicon nitride ceramic devices, metal-evaporated vacuum arc ion implanter was used to inject Si3N4 into Al3 +. The oxidation resistance of Si3N4 was investigated. The implantation energy was 40 keV and the implantation doses were 5 × 10 16 ion / cm 2 and 2 × 10 17 ion / cm 2, respectively. The cyclic oxidation behavior of Si3N4 was investigated at 1200 ℃ for 77h. The samples were observed and analyzed by SEM, XRD and EDS. The results show that the Al + 3 implants improve the oxidation resistance of Si3N4 samples, and the change of oxidation mass conforms to the parabolic law. The original Si3N4 sample has a thicker oxide layer and a more obvious delamination from the matrix. The Si3N4-infiltrated Si3N4 sample has thinner and denser oxide layer and no obvious delamination with the matrix. The electronic valence state analysis shows that the injected metal Alumina formed by aluminum is the main reason to improve the oxidation resistance of Si3N4.