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铝键合点的表面沾污增强了对铝合金化表面的腐蚀，并导致微芯片的失效．过去大量的工作多集中在由等离子工艺引起的含氟的无机沾污；很少接触到键合点的有机沾污．飞行时间二次离子质谱（ＴＯＦ－ＳＩＭＳ）提供了一个探测和分析微芯片键合点上有机沾污的有力武器．作者比较了两个ＴＯＦ－ＳＩＭＳ的正离子谱，一个是经目检发现键合点有沾污点的芯片，另一个是无沾污芯片．根据对ＴＯＦ－ＳＩＭＳ特征谱线和离子像的研究，认为沾污点是由某些以ＣＨｘ和ＮＨｙ结构组成的有机化合物造成的，并对铝有腐蚀作用．经分析发现这些有机沾污来源于微芯片的工艺过程．
Contamination of the surface of the aluminum bond enhances corrosion of the aluminum alloyed surface and leads to failure of the microchip. Much of the work in the past has focused on fluorine-containing inorganic stains caused by plasma processes; organic stains that rarely come into contact with the bond. TOF-SIMS provides a powerful tool to detect and analyze organic contamination at the bonding junctions of microchips. The authors compared the positive ion spectra of two TOF-SIMSs, one of which was spotted by visual inspection at the bonding spot and the other was a non-staining chip. According to the study of TOF-SIMS characteristic lines and ion images, it is believed that the stain is caused by certain organic compounds consisting of CHx and NHy structures and has a corrosive effect on aluminum. The analysis found that these organic contaminants from the microchip process.