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应用透表法研究硅化钯-P型硅肖特基势垒二极管(SBD)比应用EBIC法研究它的p-n结特性,尤其结深时更有明显优势:样品不需要特殊制作;无损检测方法,容易操作和使用;获得的图像十分清晰。在研制和生产半导体材料、半导体器件、集成电路和真空纳米电子器件(VND)的时候,由于它们的尺寸
It is more obvious than using the EBIC method to study the pn junction characteristics of the Pd-P-Schottky barrier diode (PDD) by using the Penetration Method: the sample does not require special fabrication; the non-destructive testing method, Easy to operate and use; the images are clear. In the development and production of semiconductor materials, semiconductor devices, integrated circuits and vacuum nano-electronic devices (VND), due to their size