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CoSiN薄膜可以作为超大规模集成电路Cu布线互连材料使用。利用磁控溅射技术制备了CoSiN/Cu/CoSiN/SiO2/Si薄膜,利用四探针测试仪、薄膜测厚仪、原子力显微镜、X射线光电子能谱仪等来检测多层膜电阻率、薄膜厚度、表面形貌、元素含量及价态等。考察亚45 nm级工艺条件下CoSiN薄膜对Cu的扩散阻挡性能。实验结果表明,在氩气气氛条件下经500℃,30 min热退火处理后多层膜的电阻率和成分没有发生明显变化,CoSiN薄膜能够保持良好的铜扩散阻挡性能;经600℃,30 min热退火处理后,Cu大量出现在表面,CoSiN薄膜对Cu失去扩散阻挡性能。
CoSiN film can be used as a very large-scale integrated circuit Cu wiring interconnect materials. CoSiN / Cu / CoSiN / SiO2 / Si thin films were prepared by magnetron sputtering. The resistivity of multilayer films was measured by four-probe tester, thin film thickness gauge, atomic force microscope and X-ray photoelectron spectrometer. Thickness, surface morphology, elemental content and valence. The diffusion barrier properties of CoSiN films to Cu under sub-45 nm processing conditions were investigated. The experimental results show that the resistivity and composition of the multilayer films did not change significantly after thermal annealing at 500 ℃ for 30 min in Ar atmosphere, and the CoSiN films can maintain good diffusion barrier properties of copper. After annealing at 600 ℃ for 30 min After thermal annealing, a large amount of Cu appears on the surface, and the CoSiN film loses the diffusion barrier property to Cu.