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采用光增益与载流子浓度的对数关系，在受激发射速率中分别引入了增益饱和项和载流子的复合项，通过适应于多量子阱激光器的速率方程，从理论上证明了对于短腔结构的激光器，阈值电流存在最小值。文中三种表述与阈值电流最小值对应的最佳阱数具有相同的表达式。讨论了阈值电流密度、最佳阱数等与器件参数（阱数、腔长和反射率等）之间的依赖关系。结果表明减少激光器的腔长，提高反射率有利于降低阈值电流。这将对量子阱激光器的研究和优化器件结构有所裨益。
By using the logarithm relationship between optical gain and carrier concentration, the composite term of gain saturation term and carrier is respectively introduced into the stimulated emission rate. By adapting to the rate equation of multiple quantum well laser, it is theoretically proved that The short cavity structure of the laser, there is a minimum threshold current. In the paper, the best expressions of the three expressions corresponding to the minimum threshold current have the same expression. The dependence of the threshold current density, the optimum number of wells, and the device parameters (well number, cavity length, reflectivity, etc.) is discussed. The results show that reducing the cavity length of the laser and increasing the reflectivity help reduce the threshold current. This will benefit quantum well laser research and optimize the device structure.