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测量了脉冲激光诱发半导体p-n结的瞬态脉冲电流,研究瞬态脉冲幅值和收集电荷与能量、偏压及入射位置的相关性。研究结果表明,瞬态脉冲信号幅值和收集到的总电荷随脉冲激光能量的增大而增多,与激光能量呈指数关系;收集电荷随偏压而增大;敏感区内的收集电荷数相差不大,远离敏感区的收集电荷明显减小。另外,将研究结果与重离子试验数据进行比对,两者有一定的相似性,但电荷收集脉冲幅值、脉冲波形有一定的差异。其结果为深入研究激光模拟单粒子效应技术奠定了基础。
The transient pulse current of the p-n junction induced by pulsed laser was measured and the dependence of the transient pulse amplitude and the collected charge on energy, bias voltage and incident position was investigated. The results show that the amplitude of the transient pulse signal and the total charge collected increase with the increase of pulsed laser energy, which is exponential with the laser energy. The collected charge increases with bias voltage. The difference between the collected charge in the sensitive area Small, far from the sensitive area of the collected charge was significantly reduced. In addition, the research results and heavy ion test data are compared, the two have some similarities, but the charge collection pulse amplitude, pulse waveform has some differences. The result lays a good foundation for further study of single-particle effect laser simulation technology.