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本文讨论了SiO_2——Si体系中各种结构缺陷的起因与特征,并详细地分析了金与SiO_2——Si界面不规则中心的互作用机理。在给出金界面效应的唯象模型的基础上予言了硅片表面质量控制及消除界西局域态的新途径。
In this paper, the origin and characteristics of various structural defects in SiO_2 - Si system are discussed, and the interaction mechanism between gold and the irregular center of SiO_2 - Si interface is analyzed in detail. On the basis of the phenomenological model of gold interface effects, a new way of controlling the surface quality of silicon wafer and eliminating the local state of the west boundary is given.