P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices.The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications.In this paper,we introduce an alteative route to stabilizing N in the oxidation process,the thermal stability of p-ZnO is significantly improved.Finally,we discuss the limitations of the alteative doping method and provide some prospective outlook of the method.