本文论述了由Ti/TiOx/Ti介观隧道结阵列构成的电子空穴对耦合的单电子陷阱存储器 ,结合目前扫描隧道显微镜 (STM)进行纳米加工的特点 ,设计了该存储器的电路结构及其结构参数 ,计算出电路的电容矩阵 ,并用MonteCarlo法对电路特性进行了模拟 .结果表明 ,该存储器与其它单电子存储器有相同的存储特性 ,但具有较高的工作温度及工作稳定性 In this paper, we discuss the electron-hole-coupled single electron trap memory composed of Ti / TiOx / Ti mesoscopic tunneling junction arrays. Combined with the current scanning tunneling microscope (STM) for nanofabrication, the circuit structure of the memory and its Structure parameters and calculated the capacitance matrix of the circuit, and the MonteCarlo method was used to simulate the circuit characteristics.The results show that the memory has the same storage characteristics as other single-electron memories, but has higher working temperature and working stability