Layered material indium selenide (InxSey) is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃ at a constant zirconium flux rate of 0.01 ML/min,the polymorphic InxSey layer emerges on top of the insulating ZrSe2 layer.Different archetypes,such as InSe,α-In2Se3 and β-In2Se3,are found in the InxSey layers.A negative magnetoresistance of 40％ at 2 K under 9T magnetic field is observed.Such an InxSev/ZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.