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用ECR(电子回旋加速共振)等离子体CVD(化学气相沉积)研究了SiN膜与沉积条件之间的关系。通过控制SiH_4/N_2的流量比及SiH_4+N_2的总流量,可以使SiN薄膜用氢氟酸缓冲溶液(BHF,50％HF:40％NH_4F=15:85)腐蚀速度降到最小。而它与微波功率关系不大。上述条件下SiN沉积膜的折射率接近于2。在SjiH_4和N_2流量皆为10cm~3/min时沉积膜电击穿时的电场强度大于8MV/cm,其介电常数(1MHz)为6.4～6.9,内应力大于7×
The relationship between the SiN film and the deposition conditions was studied by ECR (Electron Cyclotron Resonance) plasma CVD (Chemical Vapor Deposition). By controlling the flow ratio of SiH 4 / N 2 and the total flow rate of SiH 4 + N 2, the corrosion rate of SiN film can be minimized by hydrofluoric acid buffer solution (BHF, 50% HF: 40% NH 4 F = 15:85). And it has little to do with microwave power. The refractive index of the SiN deposited film is close to 2 under the above conditions. When SjiH_4 and N_2 flux are both 10cm ~ 3 / min, the electric field strength of the deposited film is more than 8MV / cm, the dielectric constant (1MHz) is 6.4 ~ 6.9 and the internal stress is more than 7 ×