在一种新的干法腐蚀二氧化硅工艺中,采用了无水氟化氢。这种方法不损伤SiO_2层下面的Si层,具有精度高和实用的特点。在所规定的温度范围和压力下,HF对Si、Si_3N_4、Al及其它常用的材料没有作用。该工艺可分二种方法:一种是透过负性光致抗蚀剂进行腐蚀的“渗透腐蚀”;另一种是直接腐蚀。本文阐述了这种新技术的发展和使用。 In a new dry-process silicon dioxide process, anhydrous hydrogen fluoride is used. This method does not damage the Si layer below the SiO 2 layer, with high precision and practical features. HF has no effect on Si, Si 3 N 4, Al and other commonly used materials at the specified temperature range and pressure. The process can be divided into two methods: one is through the negative photoresist corrosion “penetration corrosion”; the other is direct corrosion. This article describes the development and use of this new technology.