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直拉硅单晶中掺入等价元素锗可以有效地抑制氧施主，提高硅片机械强度，改善氧沉淀的状况。研究了锗的最低有效浓度并探讨了其机理。
The incorporation of germanium, an equivalent element, into Czochralski silicon single crystal can effectively suppress oxygen donor, improve the mechanical strength of the silicon wafer and improve the oxygen precipitation. The lowest effective concentration of germanium was studied and its mechanism was discussed.