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测量了阳极氧化和ZnS双层介质结构的Hg_(1-x)Cd_xTe MIS器件的C-V特性。基于Kane模型并考虑了碲镉汞导带非抛物性和载流子简并效应,进行了理论计算,高频情况下还考虑了少子在反型层中的再分布。对各种组份(x=0.2～0.56)的N型和P型Hg_(1-x)Cd_xTe MIS器件进行了变频(f=20～10MHz)和变温(T=26～200K)C-V测量。对于x=0.3的器件,测得其固定正电荷密度为8～10×10~(11)cm~(-2),80K下慢界面陷阱密度为4～10×10~(10)cm~(-2),最小界面态密度为1.7～2×10~(11)cm~(-2)·eV~(-1)。
The C-V characteristics of Hg_ (1-x) Cd_xTe MIS devices with anodic oxidation and ZnS double-layer dielectric structure were measured. Based on the Kane model and taking into account the non-parabolicity and carrier degeneracy of the HgCdTe band, theoretical calculations are carried out, and the redistribution of the minority elements in the inversion layer is also taken into account at high frequencies. Variable frequency (f = 20 ~ 10MHz) and variable temperature (T = 26 ~ 200K) C-V measurements were performed on N-type and P-type Hg_ (1-x) Cd_xTe MIS devices with various components (x = 0.2 ~ 0.56) For a device with x = 0.3, the fixed positive charge density is measured at 8-10 × 10-11 cm -2, and the slow interface trap density at 80K is 4-10 × 10-10 cm- -2), and the minimum interface state density is 1.7 ~ 2 × 10 ~ (11) cm ~ (-2) · eV ~ (-1).