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利用等离子体增强化学气相沉积法制备了镶嵌于氮化硅的高密度纳米硅薄膜,并以此作为发光有源层构建基于p-Si/氮化硅基发光层/AZO结构发光二极管,在室温下观察到了电致可见发光.在此基础上,在器件p-Si空穴注入层与氮化硅基发光层之间加入纳米硅薄层作为空穴阻挡层,研究器件电致发光性质,实验结果表明器件的发光强度显著增强,并且发光效率较无纳米硅阻挡层的发光器件提高了80%以上.
A high-density silicon nitride film embedded in silicon nitride was prepared by plasma-enhanced chemical vapor deposition and was used as a light-emitting active layer to construct a light-emitting diode based on p-Si / silicon nitride / AZO structure. The electroluminescence was observed.On the basis of this, a thin layer of nanosilica was added as a hole-blocking layer between the device p-Si hole injection layer and the silicon nitride-based light-emitting layer to study the electroluminescent properties of the device. Experiments The results show that the luminous intensity of the device is significantly enhanced, and the luminous efficiency is improved by more than 80% compared with that of the device without the nano-silicon barrier.