论文部分内容阅读
采用常规ＰＥＣＶＤ工艺，以高Ｈ２ 稀释的ＳｉＨ４ 作为反应气体源，以ＰＨ３ 作为Ｐ原子的掺杂剂，在Ｐ型（１００） 单晶硅（ｃ－ Ｓｉ） 衬底上，成功地生长了掺Ｐ的纳米硅膜（ｎｃ－ Ｓｉ（Ｐ）：Ｈ） 膜。通过对膜层结构的Ｒａｍａｎ 谱分析和高分辨率电子显微镜（ＨＲＥＭ） 观测指出：与本征ｎｃ－ Ｓｉ：Ｈ 膜相比，ｎｃ－ Ｓｉ（Ｐ）：Ｈ 膜中的Ｓｉ 微晶粒尺寸更小（～３ ｎｍ） ，其排布更有秩序，呈现出类自组织生长的一些特点。膜层电学特性的研究证实，ｎｃ－ Ｓｉ（Ｐ）：Ｈ 膜具有比本征ｎｃ－ Ｓｉ：Ｈ 膜约高两个数量级的电导率，其σ值可高达１０－ １ ～１０１ Ω－１ｃｍ －１ 。这种高电导率来源于ｎｃ－ Ｓｉ（Ｐ）： Ｈ 膜中有效电子浓度ｎｅ 的增加、Ｓｉ 微晶粒尺寸ｄ 的减小和电导激活能ΔＥ的降低。
The P-type (100) single-crystal silicon (c-Si) substrate was successfully grown by conventional PECVD process using SiH4 diluted with high H2 as the reactive gas source and PH3 as the dopant of P atom. Nanocrystalline silicon film (nc-Si (P): H) film. By Raman analysis of the film structure and high-resolution electron microscopy (HREM) observation, it is pointed out that the size of the Si crystallite in the nc-Si (P): H film is more than that of the intrinsic nc- Small (~ 3 nm), its arrangement is more orderly, showing some of the characteristics of self-organized growth. The investigation of the electrical properties of the films confirms that the nc-Si (P): H films have an electrical conductivity about two orders of magnitude higher than the intrinsic nc-Si: H films and can have σ values of up to 10 -1 to 101 Ω-1 cm- 1. This high conductivity is derived from the increase of the effective electron concentration ne in the nc-Si (P): H film, the decrease of the Si crystallite size d and the decrease of the conductance activation energy ΔE.