论文部分内容阅读
传统的功率放大器设计,大都将功率管设计在绝对稳定的状态,再进行匹配电路的设计,这样可以避免振荡的发生,但是同时也会减小放大器的增益,降低1dB压缩点的输出功率。本文提出了一种改进的放大电路设计方法,提出在潜在振荡条件下详细分析振荡区域,准确设计匹配电路,使匹配阻抗避开振荡区域,从而在保证放大器稳定工作的同时,能够提高增益和输出功率。这种方法首次应用于GaN HEMT功率放大器的设计,并且取得了很好的效果。
The traditional power amplifier design, most of the power tube design in an absolutely stable state, and then match the circuit design, so as to avoid the oscillation, but it will also reduce the amplifier gain, reducing the output power of 1dB compression point. In this paper, an improved design method of amplifier circuit is proposed. It is proposed to analyze the oscillation region under the condition of potential oscillation and design the matching circuit accurately so that the matching impedance avoids the oscillation region so as to ensure the stable operation of the amplifier and improve the gain and output power. This method is first applied to GaN HEMT power amplifier design, and achieved good results.