基于电荷控制原理建立了辐射感生AlmGa1-mN势垒层应力弛豫对AlmGa1-mN/GaN HEMTs器件电学特性影响的解析模型,并进行了仿真分析.结果表明,对于高Al组分HEMTs器件,AlmGa1-mN势垒层中辐射感生的应力弛豫影响更为显著.辐射感生应力弛豫不但导致2DEG下降和阈值电压正向漂移,而且能够引起漏极输出电流的明显下降.辐射感生应力弛豫是赝配AlmGa1-mN/GaN HEMTs辐射损伤的重要机理之一. Based on the charge control principle, an analytical model of the influence of the stress relaxation of AlmGa1-mN barrier layer on the electrical characteristics of AlmGa1-mN / GaN HEMTs devices is established and the simulation analysis is carried out. The results show that for the HEMTs with high Al content, The effect of radiation-induced stress relaxation in the AlmGa1-mN barrier layer is more pronounced. The relaxation of radiation-induced stress not only leads to the decrease of 2DEG and the forward shift of threshold voltage, but also leads to the significant decrease of drain output current. Stress relaxation is one of the important mechanisms for the pseudo-collisions of AlmGa1-mN / GaN HEMTs.