论文部分内容阅读
为了确定纳米Si晶粒气相成核的位置,采用XeCl准分子激光器,在10Pa氩气环境下,烧蚀高阻抗单晶Si靶,在距离等离子羽正下方2.0cm处、与其轴线平行放置一系列单晶Si或玻璃衬底,沉积制备了纳米Si薄膜.X射线衍射、Raman散射、扫描电子显微镜和原子力显微镜结果均显示,纳米Si晶粒只在距靶约0.5—2.8cm平行距离范围内的样品上形成,在此范围内,随着离靶平行距离的增大,所形成的纳米Si晶粒的平均尺寸逐渐减小,并且晶粒尺寸的分布也发生变化.根据成核区起始和终止的突变特征,结合晶粒形成后的平抛运动规律,对晶粒气相成核的位置进行了估算.
In order to determine the position of nucleation of nano-Si grains, XeCl excimer laser was used to ablate the high-resistance single crystal Si target under 10Pa argon atmosphere. A series of Single-crystal Si or glass substrate, deposition of nano-Si film prepared by X-ray diffraction, Raman scattering, scanning electron microscopy and atomic force microscopy results show that the nano-Si grain only from the target about 0.5-2.8cm parallel distance The average size of the formed nano-Si grains gradually decreases with the increase of the distance from the target, and the distribution of the grain size also changes.According to the initial and Termination of the mutation characteristics, combined with the law of flat throw after the formation of grain movement, grain gas phase nucleation sites were estimated.