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本文以Ｖ２Ｏ５粉末为原料，采用真空蒸发镀膜与真空退火相结合的方法，在载玻片和单晶Ｓｉ（１００）衬底上得到了ＶＯ２为主的薄膜。利用Ｘ射线光电子能谱（ＸＰＳ）对不同退火条件下所得膜的价态组份进行了分析，得到了膜中Ｖ的价态与退火温度、退火时间以及膜厚的关系。
In this paper, a VO2-based thin film was obtained on glass slides and single-crystal Si (100) substrates by a combination of vacuum evaporation and vacuum annealing. The valence components of the films obtained under different annealing conditions were analyzed by X-ray photoelectron spectroscopy (XPS). The valences of the valences of the films were related to annealing temperature, annealing time and film thickness.