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通过测试富Cd原料无籽晶垂直布里奇曼法生长出的高阻Cd0.8Zn0.2Te(CZT)单晶体的I T特性曲线,利用热激活能原理来分析单晶体内的缺陷,结果得到晶体中有一个由镉空位引起的电子陷阱,其深度为0.539eV。由于俘获能级有较高的激活能,在常温下,价带上的载流子不会被激发,所以该晶体适用于制作室温核辐射探测器。另外还研究了CZT晶体在室温下的I V特性,测得采用该方法生长的CZT单晶体电阻率高达5.0×1010Ω·cm,制作的核辐射探测器在室温下获得了比较好的241Am59.5keV能谱。
By testing the IT characteristic curves of high-resistance Cd0.8Zn0.2Te (CZT) single crystal grown from seed-free vertical Bridgman method of Cd-rich raw materials, the defects in single crystal were analyzed by using the principle of thermal activation energy. As a result, An electron trap caused by cadmium vacancies with a depth of 0.539eV. Due to the higher activation energy at the capture level, carriers at the valence band are not excited at room temperature, so this crystal is suitable for making room temperature nuclear radiation detectors. In addition, IV characteristics of CZT crystal at room temperature were also studied. The CZT single crystal grown by this method has a resistivity as high as 5.0 × 10 10 Ω · cm. The prepared nuclear radiation detector obtained a good 241 Am 59.5 keV energy spectrum at room temperature .