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在覆盖SiO2的n-Si(100)衬底上,采用等离子体增强化学沉积法(PECVD)制备Si1-xGex薄膜材料。薄膜Ge含量x及元素的深度分布由俄歇电子谱(AES)测定。对Si1-xGex进行热退火处理,以考察退火温度和时间对薄膜特性的影响。薄膜的物相通过X射线衍射(XRD)确定。基于XRD图谱,利用Scherer公式计算平均晶粒大小。Si1-xGex薄膜载流子霍尔迁移率由霍尔效应法测定。数值拟合得到霍尔迁移率与平均晶粒尺寸为近线性关系,从而得出PECVD-Si1-xGex薄膜的电输运特性基本符合Seto模型的结论。
Si1-xGex thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) on SiO2-coated n-Si (100) substrates. The film Ge content x and the elemental depth distribution were determined by Auger electron spectroscopy (AES). Si1-xGex was annealed to investigate the effects of annealing temperature and time on the properties of the films. The phase of the film is determined by X-ray diffraction (XRD). Based on the XRD patterns, the average grain size was calculated using the Scherer formula. Si1-xGex thin film carrier Hall mobility was determined by Hall effect method. The numerical results show that the Hall mobility and the average grain size are close to each other, and the electric transport properties of the PECVD-Si1-xGex thin film are basically in accordance with the Seto model.