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利用等离子体增强化学气相沉积技术制备了a-Si:H/SiO2多量子阱结构材料.对a-Si:H/SiO2多量子阱样品分别进行了3种不同的热处理,其中样品经1100℃高温退火可获得尺寸可控的nc-Si:H/SiO2量子点超晶格结构,其尺寸与非晶硅子层厚度相当.比较了a-Si:H/SiO2多量子阱材料与相同制备工艺条件下a-Si:H材料的吸收系数,在紫外/可见短波段前者的吸收系数明显增大,光学吸收边蓝移,说明该材料具有明显的量子尺寸效应,验证了采用a-Si:H/SiO2多量子阱结构来提高太阳能电池光电转换效率的可行性.另外,尺寸可控的nc-Si:H/SiO2量子点超晶格结构的形成,为纳米硅新结构太阳能电池的研究和制备奠定了基础.
A-Si: H / SiO2 multiple quantum well structure material was prepared by plasma-enhanced chemical vapor deposition technique. Three different heat treatments were performed on the a-Si: H / The size of the nc-Si: H / SiO2 quantum dot superlattice can be controlled by annealing and its size is comparable with the thickness of the amorphous silicon sublayer.Comparing the results of the a-Si: H / SiO2 multiple quantum well with the same fabrication process The absorption coefficient of a-Si: H material in the UV / visible shortwave band increased obviously and the optical absorption edge shifted blue, indicating that the material has obvious quantum size effect. The results show that the a-Si: H / SiO2 Multi-quantum well structure to improve the photoelectric conversion efficiency of solar cells.In addition, the size controllable nc-Si: H / SiO2 quantum dot superlattice structure formation, for the new structure of nano-silicon solar cells laid the foundation for the study and preparation basis.