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中子辐照区熔 (氢 )硅片经退火后在近表面形成洁净区 ,在硅片内部形成体内微缺陷 .微缺陷的形成与中子辐照造成的损伤及单晶硅内氢杂质的催化加速有关 ,还与后续退火条件有关 .第一步退火的温度对微缺陷的尺度有很大的影响 ,中低温要比高温所形成的微缺陷小 .在退火过程中微缺陷有一个生长过程 ,110 0℃退火 2 h微缺陷已达最大 .硅片表面的粗糙度影响表面洁净区的形成 ,洁净区出现在未抛光面 ,双面抛光硅片不会形成表面洁净区 .
In the neutron irradiation zone, the molten (hydrogen) silicon wafer is annealed to form a clean area near the surface and form in-vivo micro-defects in the silicon wafer. The formation of micro-defects and the damage caused by the neutron irradiation and the impurities Catalytic acceleration, but also with the subsequent annealing conditions related to the first step of the annealing temperature on the scale of microdefects have a great impact, low temperature than the micro-defects formed by high temperature micro-defects in the annealing process has a growth process , And the microdefects have reached the maximum at 110 ℃ for 2 h.The roughness of the silicon surface affects the formation of the surface clean area, the clean area appears on the unpolished surface, and the double-sided polished silicon wafer does not form the surface clean area.