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应用蒸镀-阳极氧化法制备结构为ITO/PS/p-S i/A l的多孔硅电致发光器件,在7.5V电压下实现了数小时连续电致发光.实验表明,多孔硅电致发光峰位会随着阳极氧化电流密度的增大、腐蚀时间的延长以及HF酸浓度的降低而蓝移.欲制备工作电压较低、发光时间较长、发光效率较高的电致发光样品,则多孔硅制备时的阳极氧化应使用较低电流密度和较短的腐蚀时间.
The porous silicon electroluminescent device with ITO / PS / pSi / Al was prepared by vapor deposition-anodization method, and the electroluminescence was realized at 7.5V for several hours.The experiment shows that porous electroluminescence peak With the anodic oxidation current density increases, the extension of the etching time and the decrease of HF acid concentration and blue shift. To prepare the working voltage is lower, longer light-emitting time, high luminous efficiency of electroluminescent samples, the porous Anodization for silicon preparation should use lower current densities and shorter etch times.